If gate to source is breakdown of P-Channel MOSFET, Will gate to drain be also breakdown?
I have failured P channel MOSFETs.
During dielectric test or ESD test, MOSFET died.
Max. Gate to sorce voltage is only 8V. There is no protection for gate to source.
Gate to drain shorted. Also gate to sorce shorted.
I don't know the process of breakdown.
Firstly, is gate to sorce breakdown? And then gate to drain will also be breakdown?
Or if gate to source shorted. Is resiatance between gate to drain almost zero?